The TDSU 1 runs different systems for the deposition of metall and dielectric layers based either on chemical vapor deposition (ALD Beneq TFS200, PECVD PlasmaLab System100) or physical vapor deposition (Electron beam evaporator MEB 550S, sputter deposition A320-Orion).

Atomic layer deposition: TFS 200 (Beneq)

  • Thermal or Plasma-enhanced ALD
  • Direct and remote capacitive coupled plasma up to 300W
  • Cold-wall vacuum chamber and hot-wall reaction chamber
  • Substrate temperature: 25 - 500°C


Precursor sources

  • 4 liquid sources (stabilized at 20°C): Water, TMA, TiCl4, DEZn
  • 2 Hot sources (up to 300 °C): N/A
  • 1 hot source (up to 500°C): N/A
  • Ozone source


Plasma and process gases

Plasma and process: O2, NH3 ; Only plasma: H2, Ar, N2O

PECVD: Plasmalab System 100 (Oxford Instruments)

The plasma enhanced chemical vapor deposition (PECVD) system is part of a cluster tool combined with the multi purpose reactive ion etching system Plasmalab System 100.

  • Possible materials: Si3N4, SiO2, SiC
  • Heated lower electrode, up to 400°C
  • 500W LF plasma source and 300W HF plasma source
  • System and load lock configured for sample sizes up to 4" wafer


Available gases:

Silane, NH3, N2O, N2, CH4, CF4

Electron beam evaporator: MEB 550S (Plassys)

The MEB 550S is an electron beam evaporator with fully automated controll. For reduced pumping time the machine has a load lock and is capable of processing substrates up to 4". The substrate holder can be adjusted in an angel to the source with an accuracy of 0.01°. It also can rotate around it's own axis. For cleaning/etching substrates the evaporator has an ion gun with which an O2 or Ar/O2 plasma can be created.
The accuracy of the deposition rate is determined by an oscillating crystal and is up to 0.01nm/s. The reproducibility of the layer thickness is +/- 1s * evaporation rate.

Sputter deposition: Orion-5 (AJA Int.)

  • A320-XP-O magnetron sputtering source with two 300W RF source and one 500W DC source
  • O2 plasma cleaning or layer densification with 100W RF source for substrate biasing
  • Ar and O2 gas lines
  • Substrate heating up to 600°C
  • Sputter-down geometry


Available targets:

Ti, Cr, Al, Au, Ag, ITO, TiO2, Nb2O5