Lecture: Plasmon-exciton interaction in systems with monolithically integrated InAs/AlGaAs quantum dots

15.03.2017, 11:00

Dr. Anna Lyamkina, Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Science, Novosibirsk

Time, place:
Wednesday, 15th March 2017, 11:00h
Seminar Room A1.500, MPL, Staudtstr. 2, 91058 Erlangen


Semiconductor quantum emitters coupled with plasmonic nanoantennas pave the way towards chip-scale integrable quantum photonics devices. For this purpose, stable and bright semiconductor emitters are needed, which moreover allow for CMOS compatibility, electrical excitation and optical activity in the telecommunication band. In this talk we discuss light-matter interaction between near-surface (10 nm) InAs/AlGaAs quantum dots (QD) and plasmonic nanoantennas. Hybrid QD structures with indium clusters fabricated by molecular beam epitaxy demonstrate plasmonmediated energy transfer in QD ensembles that leads to photoluminescence enhancement [1]. Coupling QDs to sub-wavelength lithographically-defined bowtie nanoantennas linearly polarizes QD emission, enhances its intensity and results in a pronounced Purcell effect [2]. We discuss further perspectives of coupling between QDs and V-groove based plasmonic waveguides and compensation of losses in plasmonic system by nonradiative energy transfer from excited QDs in order to develop compact and energy efficient photonic circuits.



[1] Lyamkina et al. Appl. Phys. Lett. 110, 011103 (2017).

[2] Lyamkina et al. Opt. Express 24(25), 28936 (2016).