Lecture: Coherent control and efficient interfacing of Silicon-vacancy centers in diamond

13.03.2017, 15:00

Prof. Christoph Becher, Universität des Saarlandes, Saarbrücken, Germany Dr. Philipp Fuchs, Universität des Saarlandes, Saarbrücken, Germany

Time, place:
Monday, 13th March 2017, 15:00h
Seminar Room A1.500, MPL, Staudtstr. 2, 91058 Erlangen


Color centers in diamond, i.e. atomic-scale, optically active defects in the diamond lattice, have received large recent attention as versatile tools for solid-state-based quantum technologies. The most prominent example is the nitrogen vacancy (NV) center providing very long spin coherence times. On the other hand, silicon vacancy (SiV) centers have attracted large interest due to their spin-accessible optical transitions [1] and the quality of their optical spectrum, i.e. narrow zero phonon lines and weak phonon sidebands [2]. We here present all-optical coherent control of the orbital and spin states of the SiV center, both in steady-state [3] and with ultrafast optical pulses [4]. We discuss limitations of the spin coherence times and methods to enhance them.

A limitation of current experiments in bulk diamond is the typically small photon collection efficiency of a few percent only. More efficient interfacing can be achieved in general by controlling the local density of states (LDOS) for color centers embedded in the diamond material. We will discuss a promising route for LDOS control, i.e. planar antenna structures, consisting of layers of dielectric and metal films, which modify the dipole emission characteristics and provide moderate spontaneous emission enhancement (Purcell) factors to yield large collection efficiencies.


[1] T. Müller et al., Nature Commun. 5, 3328 (2014).

[2] E. Neu et al., New J. Phys. 13, 025012 (2011).

[3] B. Pingault et al., Phys. Rev. Lett. 113, 263601 (2014).

[4] J.N. Becker et al., Nature Commun.7, 13512 (2016).