Etching

The plasma etching systems are mainly used for anisotropic pattern transfer of the lithographically structured resist into the underlying material. Binary and selective etching processes are possible. Depneding on the mask material and the etching process a high aspect ratio can be reached.

Reactive ion etching and ICP: Plasmalab 100 (Oxford Instruments)

  • Multi purpose plasma etching system for several metals, III-V semiconductor and oxides
  • Direct plasma up to 300W and ICP up to 1000W
  • End point detection system (laser interferometer)
  • System and load lock configured for sample sizes up to 4" wafer

Available gases:

CF4, SF6, BCl3, Cl2, CH4, H2, Ar, O2

     

Cryogenic RIE and ICP: PlasmaPro 100 (Oxford Instruments)

  • Deep silicon etching system
  • Direct plasma up to 300W and ICP up to 3000W
  • Liquide N2 cooled and heated lower electrode → Temperatures  -150°C to 400°C possible
  • Equiped for Bosch processing
  • System and load lock configured for sample sizes up to 4" wafer

 

Available gases:

SF6, C4F8, O2